GB/T 36706-2018

Active

Polycrystalline indium phosphide

磷化铟多晶

Standard Type

GBT

ICS

29.045

CCS

H83

Status

Active

Issue Date

2018-09-17

Implementation

2019-06-01

Centralized Committee

国家标准委

Issuing Authority

国家市场监督管理总局、中国国家标准化管理委员会

Application Summary AI generated

GB/T 36706-2018 specifies the technical requirements, test methods, inspection rules, and packaging for polycrystalline indium phosphide, a semiconductor material used in high-frequency and optoelectronic devices. It is applied in the manufacturing of substrates for integrated circuits, lasers, and photodetectors within the electronics and telecommunications industries. The standard ensures material purity, crystal quality, and consistency for reliable performance in compound semiconductor production.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.